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Electron Beam Mask Writing System for High-precision Reticles The HL-900M Series 206(a) m serif-pattern image(b) m serif-pattern imageElectron Beam Mask Writing System for high -precisionReticles The HL-900M Series OVERVIEW: Along with the accelerated miniaturization of semiconductordevices, the specifications for reticles used in lithography processes arerapidly demanding higher levels of accuracy. Many semiconductormanufacturers are already developing 130-nm nodes, and the Electron beamwriting systems used in manufacturing reticles must also follow the trendtoward higher accuracy that is seen in devices. In December 1999, Hitachi,Ltd. announced the HL-900M Series Electron beam photomask writingsystem, which was developed in response to user demand for high -precisionreticles1). This System is based on the HL-800M Series and introduces newelectron optics, a low-distortion stage, and parallel processing function forcoping with large volumes of data to achieve higher accuracy and higherthroughput.
Electron Beam Mask Writing System for High-precision Reticles —The HL-900M Series— 206 (a) 0.4-µm serif-pattern image (b) 0.3-µm serif-pattern image
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