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Etch rates for micromachining processing-part II ...

JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 12, NO. 6, DECEMBER 2003761 Etch rates for micromachining Processing Part IIKirt R. Williams, Senior Member, IEEE, Kishan Gupta, Student Member, IEEE, and Matthew WasilikAbstract Samples of 53 materials that are used or potentiallycan be used or in the fabrication of microelectromechanicalsystems and integrated circuits were prepared: single-crystalsilicon with two doping levels, polycrystalline silicon with twodoping levels, polycrystalline germanium, polycrystalline SiGe,graphite, fused quartz, Pyrex 7740, nine other preparations ofsilicon dioxide, four preparations of silicon nitride, sapphire,two preparations of aluminum oxide, aluminum, Al/2%Si, tita-nium, vanadium.

WILLIAMS et al.: ETCH RATES FOR MICROMACHINING PROCESSING—PART II 765. TABLE IV E. TCH. R. ATES OF. S. ILICON. N. ITRIDE AND. A. LUMINUM. O. XIDE (nm/min) similar Borofloat glass) are used in anodic bonding to silicon

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