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Etch rates for micromachining processing-part II ...
JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 12, NO. 6, DECEMBER 2003761 Etch rates for micromachining processing part IIKirt R. Williams, Senior Member, IEEE, Kishan Gupta, Student Member, IEEE, and Matthew WasilikAbstract Samples of 53 materials that are used or potentiallycan be used or in the fabrication of microelectromechanicalsystems and integrated circuits were prepared: single-crystalsilicon with two doping levels, polycrystalline silicon with twodoping levels, polycrystalline germanium, polycrystalline SiGe,graphite, fused quartz, Pyrex 7740, nine other preparations ofsilicon dioxide, four preparations of silicon nitride, sapphire,two preparations of aluminum oxide, aluminum, Al/2%Si, tita-nium, vanadium, niobium, two preparations of tantalum, twopreparations of chromium, Cr on Au, molybdenum, tungsten,nickel, palladium, platinum, copper, silver, gold, 10 Ti/90 W, 80Ni/20 Cr, TiN, four types of photoresist, resist pen, Parylene-C,and spin-on polyimide.
T. ARGET. M. ATERIALS. Polysilicon LPCVD Undoped: Undoped polycrystalline sil-icon deposited in a Tylan low-pressure chemical-vapor deposi-tion (LPCVD) furnace with recipe SiH sccm, temperature , pressure mtorr. Deposited on a wafer with 100 nm of thermal oxide on it to enable interferometric thickness measurements.. Undoped poly, which has
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