Transcription of Etch rates for micromachining processing-part II ...
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JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 12, NO. 6, DECEMBER 2003761 Etch rates for micromachining processing part IIKirt R. Williams, Senior Member, IEEE, Kishan Gupta, Student Member, IEEE, and Matthew WasilikAbstract Samples of 53 materials that are used or potentiallycan be used or in the fabrication of microelectromechanicalsystems and integrated circuits were prepared: single-crystalsilicon with two doping levels, polycrystalline silicon with twodoping levels, polycrystalline germanium, polycrystalline SiGe,graphite, fused quartz, Pyrex 7740, nine other preparations ofsilicon dioxide, four preparations of silicon nitride, sapphire,two preparations of aluminum oxide, aluminum, Al/2%Si, tita-nium, vanadium, niobium, two preparations of tantalum, twopreparations of chromium, Cr on Au, molybdenum, tungsten,nickel, palladium, platinum, copper, silver, gold, 10 Ti/90 W, 80Ni/20 Cr, TiN, four types of photoresist, resist pen, Parylene-C,and spin-on polyimide.
deposition was preceded by the deposition of silicon seed layer approximately 6 nm thick using the recipe sccm,, mtorr. Germanium forms an oxide that is soluble in water. Thus, water with a high concentration of dissolved oxygen etches ger-manium. Hydrogen peroxide is a useful etchant for Ge, etching faster at higher temperature.
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