Transcription of Features Mechanical Data - Diodes Incorporated
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Features Mechanical Data - Diodes Incorporated
DMG1012T Document number: DS31783 Rev. 6 - 2 1 of 7 September 2018 Diodes Incorporated DMG1012T N-CHANNEL ENHANCEMENT MODE MOSFET Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected up to 2kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Mechanical Data Case: SOT523 Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin Annealed over Alloy 42 Leadframe.
GSS — — ±1.0 µA GS = ±4.5V, DS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V GS(TH) 0.5 — 1.0 V V DS = V GS, I D = 250μA Static Drain-Source On-Resistance = 2.5V, IR DS(ON) — 0.3 = 4.5V, I0.4 Ω = V GS D = 600mA 0.4 0.5 V GS D 500mA 0.5 V0.7 GS = 1.8V, I D = 350mA Forward Transfer Admittance |Y fs | — = 1.4 — S V DS ...
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