Transcription of 先端GaN-HEMTデバイス技術 - fujitsu.com
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先端GaN-HEMTデバイス技術 - fujitsu.com
GaN-HEMT GaN-HEMT Technology for Future Applications wimax Worldwide Interoperability for Microwave Access GaN HEMT High Electron Mobility Transistor GaN-HEMT MIS Metal Insulator Semiconductor 3 V 800 mA/mm 320 V GaN Abstract We investigated future power applications of GaN high electron mobility transistors (HEMTs) after successfully developing a high-efficiency GaN-HEMT amplifier for mobile Worldwide Interoperability for Microwave Access ( wimax ) base stations. Its excellent material properties also make the GaN-HEMT a good candidate for future power electronic devices, which must operate with a high drain current and high voltage.
先端GaN-HEMTデバイス技術 GaN-HEMT Technology for Future Applications あらまし 富士通研究所は，モバイルWiMAX （Worldwide Interoperability for Microwave
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