Transcription of 先端GaN-HEMTデバイス技術 - img.jp.fujitsu.com
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先端GaN-HEMTデバイス技術 - img.jp.fujitsu.com
GaN-HEMT . GaN-HEMT Technology for Future Applications . WiMAX Worldwide Interoperability for Microwave Access GaN . HEMT High Electron Mobility Transistor . GaN-HEMT .. MIS Metal Insulator Semiconductor . 3 V 800 mA/mm 320 V . GaN .. Abstract We investigated future power applications of GaN high electron mobility transistors (HEMTs) after successfully developing a high-efficiency GaN-HEMT amplifier for mobile Worldwide Interoperability for Microwave Access (WiMAX) base stations. Its excellent material properties also make the GaN-HEMT a good candidate for future power electronic devices, which must operate with a high drain current and high voltage. Fabricated normally-off GaN-HEMT devices showed a threshold voltage of 3 V, maximum drain current of 800 mA/mm, and off-state breakdown voltage of 320 V.
先端gan-hemtデバイス技術 の方法ではエッチング深さのコントロールが難しい という問題がある。著者らは既に，新規 ...
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