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GAN POWER TRANSISTORS - Panasonic

GAN POWER TRANSISTORS NEW CONTENDER FOR THE POWER TRANSISTOR THRONE: HOW GAN IS THREATENING THE MOSFET S CROWNWHITE PAPER VERSION GAN POWER TRANSISTORS VERSION CHARACTERISTICS OF GAN ..3 INTRODUCTION ..3 OVERVIEW AND ADVANTAGES ..4 gate DRIVING PRINCIPLE ..5 Panasonic S HD-GIT STRUCTURE ..6 reliability ..7 END OF LIFE TEST ..8 SOLVING THE CURRENT COLLAPSE PROBLEM ..8 MECHANICAL STRESS ..9 TESTING TRAPPING AND CURRENT COLLAPSE ..9 ROBUSTNESS IN APPLICATION ..10 APPLICATIONS OF GIT TRANSISTORSSTRESS ..11 Panasonic gate DRIVER IC ..12 ADVANTAGES IN APPLICATIONS ..13 TABLE OF CONTENTS3 Panasonic GAN POWER TRANSISTORS VERSION For more than 35 years, POWER MOSFETs have dominated the field of POWER converter design in the low to medium POWER range. This has been supported by continuous innova-tion in the components structure and related semiconductor technology.

reliability characteristics of the transistors (Figure 2), as we’ll develop further below. The transistor is turned on resp. off like a field effect transistor, by applying a gate-source volt-age above resp. below a threshold voltage. In off state, the p-GaN gate depletes the electron gas underneath by lifting

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