Transcription of GAN POWER TRANSISTORS - Panasonic
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GAN POWER TRANSISTORS - Panasonic
GAN POWER TRANSISTORS NEW CONTENDER FOR THE POWER TRANSISTOR THRONE: HOW GAN IS THREATENING THE MOSFET S CROWNWHITE PAPER VERSION GAN POWER TRANSISTORS VERSION CHARACTERISTICS OF GAN ..3 INTRODUCTION ..3 OVERVIEW AND ADVANTAGES ..4 GATE DRIVING PRINCIPLE ..5 Panasonic S HD-GIT STRUCTURE ..6 RELIABILITY ..7 END OF LIFE TEST ..8 SOLVING THE CURRENT COLLAPSE PROBLEM ..8 MECHANICAL STRESS ..9 TESTING TRAPPING AND CURRENT COLLAPSE ..9 ROBUSTNESS IN APPLICATION ..10 APPLICATIONS OF GIT TRANSISTORSSTRESS ..11 Panasonic GATE DRIVER IC ..12 ADVANTAGES IN APPLICATIONS ..13 TABLE OF CONTENTS3 Panasonic GAN POWER TRANSISTORS VERSION For more than 35 years, POWER MOSFETs have dominated the field of POWER converter design in the low to medium POWER range. This has been supported by continuous innova-tion in the components structure and related semiconductor technology. Fast switching characteristics and low losses, as well as ease of use in various circuit topologies also con-tributed to their success.
the manufacturing of high-switching frequency capable tran-sistors. These in turn improve the power density of power conversion systems, thanks to lower conduction losses, and thanks to a reduction of the typical system size and weight – for example by reducing the size of passive components under fast switching conditions.
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