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AON7400A30V N-Channel MOSFETG eneral DescriptionProduct SummaryVDS ID (at VGS=10V)40A RDS(ON) (at VGS=10V)< RDS(ON) (at VGS = )< 100% UIS Tested100% Rg TestedSymbolVDS The AON7400A combines advanced trench MOSFET technology with a low resistance package to provideextremely low RDS(ON). This device is suitable for use as ahigh side switch in SMPS and General purposeapplications. RoHS and Halogen-Free CompliantVMaximumUnitsParameterAbsolute Maximum Ratings TA=25 C unless otherwise noted30 VDrain-Source Voltage30G D SDFN 3x3 EPTop View Bottom View Pin 1 Top View12348765 VDSVGSIDMIAS, IAREAS, EARTJ, TSTGS ymbolt 10sSteady-StateSteady-StateR JCMaximum Junction-to-Case C/W C/WMaximum Junction-to-Ambient A Dissipation APDSMWTA=70 C252TA=25 CID4028TC=25 CTC=100 CPower Dissipation BPDC ontinuous DrainCurrent3615A27 ATA=25 CIDSMATA=70 CV40V 20 Gate-Source VoltageDrain-Source Voltage30 Avalanche energy L= CmJAvalanche Current C12 Junction and Storage Temperature Range-55 to 150 CThermal CharacteristicsUnitsMaximum Junction-to-Ambient A C/WR JA3060100 Pulsed Drain Current CContinuous DrainCurrent GParameterTypMaxTC=25 C Rev.

AON7400A 30V N-Channel MOSFET General Description Product Summary VDS ID (at V GS =10V) 40A R DS(ON) (at V GS =10V) < 7.5mΩ R DS(ON) (at V GS = 4.5V) < 10.5mΩ 100% UIS Tested 100% R g Tested Symbol VDS • The AON7400A combines advanced trench MOSFET

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