Transcription of GN001 Application Guide Design with GaN Enhancement …
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GN001 Application Guide Design with GaN Enhancement …
GaN Systems 1GN001 Application GuideDesign with GaN Enhancement mode HEMTU pdated on FEB 28, 2018 GaN Systems Systems 2 AgendaThis revision: Feb 28, 2018 Please visit the latest version of this document Basics Gate Drive Design considerations Design examples PCB Layout Switching Testing resultsGaN Systems 3 Fundamentals of a GaN HEMTGaN Enhancement mode High Electron Mobility Transistor (E-HEMT) A lateral 2-dimensional electron gas (2 DEG) channel formed on AlGaN/GaN hetero-epitaxy structure provides very high charge density and mobility For Enhancement mode operation, a gate is implemented to deplete the 2 DEG underneath at 0V or negative bias. A positive gate bias turns on the 2 DEG channel It works just like MOSFET except better switching performanceIDSvs. VDScharacteristics0204060801001201401601 8020005101520 VGS= 2 VVGS= 3 VVGS= 4 VVGS= 5 VVGS= 6 VIDS(A)VDS(V)Si substrate2 DEG ChannelSourceSubstrateGaN Buffer LayersAlGaN Barrier LayerGateDrainP-GaN0V+-VDSSi substrate2 DEG ChannelSourceSubstrateGaN Buffer LayersAlGaN Barrier LayerGateDrain+-VDS+P-GaNGaN Systems 4E-HEMT Gate characteristicsGate Bias LevelGaN Systems GaN E-HEMTSi MOSFETIGBTSIC MOSFETM aximum rating-10/+7V+/-20V+/-20V-8/+20 VTypical gate bias values0 or-3/+5-6V0/+10-12V0 or -9/+15V-4/+15-20 VCommon with Si MOSFET True E-mode, normally off Voltage driven -driver charges/discharges CISS Supply Gate leakag
GaN Systems – 1 GN001 Application Guide. Design with GaN Enhancement mode HEMT. Updated on FEB 28, 2018. GaN Systems Inc.
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