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IGBT/MOSFET Gate Drive Optocoupler - Vishay …

Vishay SEMICONDUCTORSO ptocouplers and Solid-State RelaysApplication Note 91 IGBT/MOSFET gate Drive OptocouplerAPPLICATION NOTE Rev. , 24-Oct-111 Document Number: 81227 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT TO IGBTThe Insulated gate Bipolar transistor ( igbt ) is a crossbetween a MOSFET (metal oxide semiconductor field effecttransistor) and a BJT (bipolar junction transistor) since itcombines the positive aspects of mosfets and igbt has the fast switching capability of the MOSFETand is capable of handling the high current values typical ofa BJT. In addition, IGBTs have a lower on-state voltage dropand are capable of blocking higher igbt , as a first approximation, can be modeled as aPNP transistor driven by a power MOSFET, as shown infigure 1.

drive circuit and the applied gate voltage. Hence, it is possible to control the turn-on speed of the device by choosing an appropriate value of gate resistance (Rgate). In other words, by varying the Rgate it is possible to vary the time constant of the parasitic net equal to R gate x (CGE+CCG) and then dV/dt. Therefore, the Rgate value ...

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  Drive, Vishay, Gate, Mosfets, Igbt, Optocoupler, Igbt mosfet gate drive optocoupler

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