Introduction to Plasma Etching Lecture

Lam Research Corp. 1 Introduction to Plasma EtchingDr. Steve SirardTechnical DirectorLam Research CorporationLam Research Corp. 2 Day 1 Review Plasma Fundamentals++++**e-e-e-e-+Collisional Processes-Ionization-Dissociation-Excita tionh Plasmas consists of electrons, ions, neutrals, radiation ne~ ni<< ng(weakly ionized) Collisional processes sustain the Plasma and create radicals (etchant) Electrons are very hot Sheaths form at the walls/substrate to confine electrons and directionally accelerate ions Lam Research Corp. 3 Day 1 Review AnisotropicPlasma EtchingElectrodeSheath ( V ~ 10 1000V)++++Synergy! Energy (eV)Ion Energy (eV)Ion FluxSiO2(s) + CxFy+ I+(Ei) SiF4(g) + CO(g)Vertical, anisotropic etchLam Research Corp. 4 Primary Etching variables available to process engineers Common pattern transfer issues Advanced etch strategies: Pulsing strategies, Atomic layer Etching Within-wafer etch uniformity control Plasma & surface diagnosticsDay 2 -OutlineLam Research Corp.

Exacerbated by polymers that deposit well at the top of features, but deposit poorly deeper down the feature Bowing. ... Ion deflection due to differential charging of microstructures Microtrenching Clarycon Schaepkens, APL, (1998) Bogart, JVSTA, (2000) Lam Research Corp. 28

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  Lecture, Polymer, Microstructures

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