Transcription of Lateral ion implant straggle and mask proximity …
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Lateral ion implant straggle and mask proximity …
1946 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 50, NO. 9, SEPTEMBER 2003 Lateral Ion implant straggle andMask proximity EffectTerence B. Hook, J. Brown, Peter Cottrell, Fellow, IEEE, Eric Adler, Dennis Hoyniak, Jim Johnson, and Randy MannAbstract Lateral scattering of retrograde well implants isshown to have an effect on the threshold voltage of nearby threshold voltage of both NMOSFETs and PMOSFET sincreases in magnitude for conventional retrograde wells, but fortriple-well isolated NMOSFETs the threshold voltage decreasesfor narrow devices near the edge of the well.
HOOK et al.: LATERAL ION IMPLANT STRAGGLE AND MASK PROXIMITY EFFECT 1947 Fig. 2. Contour plot of simulated doping near resist mask edge. Only boron
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