Transcription of Lecture 25 MOSFET Basics (Understanding with Math) …
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ECE 3040 - Dr. Alan DoolittleGeorgia TechLecture 25 MOSFET Basics (Understanding with Math) Reading: Pierret and Jaeger and NotesECE 3040 - Dr. Alan DoolittleGeorgia TechMOS Transistor I-V DerivationWith our expression relating the Gate voltage to the surface potential and the fact that S=2 F we can determine the value of the threshold voltage areaunit per ecapacitanc oxide theiswhere,devices) channel-p(for 222devices) channel-n(for 222oxoxoxFSDoxSFTFSAoxSFTxCqNCVqNCV Where we have made use of the use of the expression,oSSK ECE 3040 - Dr. Alan DoolittleGeorgia TechMOS Transistor I-V DerivationCoordinate Definitions for our NMOS Transistorx=depth into the semiconductor from the oxide along the channel from the source contactz=width of the channelxc(y) = channel depth (varies along the length of the channel).n(x,y)= electron concentration at point (x,y) n(x,y)=the mobility of the carriers at point (x,y)Device width is ZChannel Length is LAssume a Long Channel device (for now do not worry about the channel length modulation effect)ECE 3040 - Dr.
Georgia Tech ECE 3040 - Dr. Alan Doolittle Lecture 25 MOSFET Basics (Understanding with Math) Reading: Pierret 17.1-17.2 and Jaeger 4.1-4.10 and Notes
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