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Lecture 9: Digital Signal Processors: Applications and ...

1 Kurt KeutzerLecture 9: Digital Signal Processors: Applications and ArchitecturesPrepared by: Professor Kurt KeutzerComputer Science 252, Spring 2000 With contributions from:Dr. Jeff Bier, BDTI; Dr. Brock Barton, TI; Prof. Bob Brodersen, Prof. David Patterson 2 Kurt KeutzerProcessor ApplicationsGeneral Purpose - high performance Pentiums, Alpha s, SPARC Used for general purpose software Heavy weight OS - UNIX, NT Workstations, PC sEmbedded processors and processor cores ARM, 486SX, hitachi SH7000, NEC V800 Single program Lightweight, often realtime OS DSP support Cellular phones, consumer electronics ( CD players) Microcontrollers Extremely cost sensitive Small word size - 8 bit common Highest volume processors by far Automobiles, toasters, thermostats, .. IncreasingCostIncreasingvolume3 Kurt KeutzerProcessor Markets$30B$ $ $10B/33%8-bitmicro16-bitmicroDSP32-bitmi cro$ $ bit DSP4 Kurt KeutzerThe Processor Design SpaceCostPerformanceMicroprocessorsPerfo rmance iseverything& Software rulesEmbeddedprocessorsMicrocontrollersC ost is everythingApplication specific architecturesfor performance5 Kurt KeutzerMarket for DSP ProductsMixed/SignalAnalogDSPDSP is the fastest growing segment of the semiconductor market6 Kurt KeutzerDSP ApplicationsAudio Applications MPEG Audio Portable audioDigital camerasWireless Cellular telephones Base stationNetworking Cable modems ADSL VDSL7 Kurt KeutzerAnother Look at DSP ApplicationsHigh-end Wireless Base Sta

2 Kurt Keutzer Processor Applications General Purpose - high performance Pentiums, Alpha’s, SPARC Used for general purpose software Heavy weight OS - UNIX, NT Workstations, PC’s Embedded processors and processor cores ARM, 486SX, Hitachi SH7000, NEC V800 Single program Lightweight, often realtime OS DSP support Cellular phones, consumer electronics …

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chapter2.fm Page 33 Monday, September 4, 2000 …

bwrcs.eecs.berkeley.edu

IC packaging Future Trends in Integrated Circuit Technology 2.1 Introduction 2.2 Manufacturing CMOS Integrated Circuits 2.2.1 The Silicon Wafer 2.2.2 Photolithography 2.2.3 Some Recurring Process Steps ... cess that lies at the core of the semiconductor revolution. Yet, some insight in the steps ...

  Technology, Packaging, Pages, September, Semiconductors, Monday, Fm page 33 monday, September 4

Designing a Divider - University of California, Berkeley

bwrcs.eecs.berkeley.edu

Digital Integrated Circuits 2/e DIVIDE HARDWARE Version 1 ° 64-bit Divisor reg, 64-bit ALU, 64-bit Remainder reg, 32-bit Quotient reg Remainder Quotient Divisor …

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CMOS Manufacturing Process

bwrcs.eecs.berkeley.edu

Digital Integrated Circuits Manufacturing Process EE141 A Modern CMOS Process p-well n-well p+ p-epi SiO 2 AlCu poly n+ SiO 2 p+ gate-oxide Tungsten TiSi 2 Dual-Well Trench-Isolated CMOS Process

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DESIGNING COMBINATIONAL LOGIC GATES IN CMOS

bwrcs.eecs.berkeley.edu

198 DESIGNING COMBINATIONAL LOGIC GATES IN CMOS Chapter 6 6.1Introduction The design considerations for a simple inverter circuit ere presented in the previousw chapter. In this chapter, the design of the inverter will be extended to address the synthesis

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DESIGNING SEQUENTIAL LOGIC CIRCUITS

bwrcs.eecs.berkeley.edu

272 DESIGNING SEQUENTIAL LOGIC CIRCUITS Chapter 7 7.1 Introduction Combinational logic circuits that were described earlier have the property that the output

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Lecture11-MOS Cap Delay

bwrcs.eecs.berkeley.edu

EE141 25 EECS141 Lecture #11 25 The Miller Effect V in M1 C gd1 V out ∆V As V in increases, V out drops – Once get into the transition region, gain from V in to V out > 1 So, C gd experiences voltage swing larger than V

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Chapter 4 Calculating the Logical Effort of Gates

bwrcs.eecs.berkeley.edu

4.3 Calculating logical effort Definition 4.2 provides a convenient method for calculating the logical effort of a logic gate. We have but to design a gate that has the same current drive character-istics as a reference inverter, calculate the input capacitances of each signal, and apply Equation 4.1 to obtain the logical effort.

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DESIGNING COMBINATIONAL LOGIC GATES IN CMOS

bwrcs.eecs.berkeley.edu

of arbitrary digital gates such as NOR, NAND and XOR. The focus will be on combina-tional logic (or non-regenerative) circuits that have the property that at any point in time, the output of the circuit is related to its current input signals by some Boolean expression (assuming that the transients through the logic gates have settled).

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Introduction to OFDM

bwrcs.eecs.berkeley.edu

OFDM Introduction EE225C Introduction to OFDM lBasic idea ... – Selective Fading – Very short pulses – ISI iscompartively long – EQs are then very long – Poor spectral efficiency because of band guards Drawbacks ... 2 4 6 8 10 12 14 16-60-55-50-45-40-35-30-25-20-15-10

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SEMICONDUCTOR MEMORIES

bwrcs.eecs.berkeley.edu

The read-out of the 1T DRAM cell is destructive; read and refresh operations are necessary for correct operation. Unlike 3T cell, 1T cell requires presence of an extra capacitance that must be explicitly included in the design. When writing a “1” into a DRAM cell, a threshold voltage is lost.

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HPE iLO 5 2.10 User Guide Part Number: 880740-007 Published: December 2019 Edition: 1 Abstract This guide provides information about configuring, updating, and operating supported HPE ProLiant servers

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