Transcription of LOR and PMGI Resists - MicroChem
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LOR and PMGI Resists - MicroChem
LOR and pmgi Resists DESCRIPTION LOR and pmgi Resists are based onpolydimethylglutarimide. Its unique properties enableLOR and pmgi products to perform exceptionally wellwhen used, either as a sacrificial layer, or as an undercutlayer in bi-layer lift-off processing. LOR and pmgi resistsare designed for applications requiring high resolutionimaging, easy process tuning, high yields and superiordeposition line width control. Mainstream applicationsutilizing LOR or pmgi Resists include GMR & MR heads,wireless devices, opto-electronics, MEMs, and 1: SFG2 w/TOK Resist 80 nmline BENEFITS Sub m lift-off processing. Film thicknesses for depositions from <20nm - >5 m. Dissolution Rate optimized for maximum undercut control.
LOR and PMGI Resists DESCRIPTION LOR and PMGI resists are based on polydimethylglutarimide. Its unique properties enable LOR and PMGI products to perform exceptionally well
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