Transcription of < Silicon RF Power MOS FET (Discrete) > RD16HHF1
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< Silicon RF Power MOS FET (Discrete) > RD16HHF1
Publication Date : Mar 2018 1 < Silicon RF Power MOS FET ( discrete ) > RD16 HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30 MHz,16W DESCRIPTION RD16 HHF1 is a MOS FET type transistor specifically designed for HF RF Power amplifiers applications. FEATURES High Power gain: Pout>16W, Gp>16dB Integrated gate protection diode APPLICATION For output stage of high Power amplifiers in HF band mobile radio sets. RoHS COMPLIANT RD16 HHF1-501 is a RoHS compliant product. RoHS compliance is indicate by the letter G after the lot marking. This product include the lead in high melting temperature type solders. However, it is applicable to the following exceptions of RoHS Directions.
< Silicon RF Power MOS FET (Discrete) > RD16HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W Publication Date : Mar．2018 2 ABSOLUTE MAXIMUM RATINGS
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