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MBRS360T3 - Surface Mount Schottky Power Rectifier

Semiconductor Components Industries, LLC, 2014 March, 2020 Rev. 141 Publication Order Number: MBRS360T3 /DSurface MountSchottky Power RectifierMBRS360T3G,MBRS360BT3G,NRVBS360 T3G,NRVBS360BT3G,NRVBS360 BNT3 This device employs the Schottky Barrier principle in a large areametal to silicon Power diode. State of the art geometry featuresepitaxial construction with oxide passivation and metal overlaycontact. Ideally suited for low voltage, high frequency rectification, oras free wheeling and polarity protection diodes, in Surface mountapplications where compact size and weight are critical to the Small Compact Surface Mountable Package with J Bend Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction Excellent

Schottky Power Rectifier MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G, NRVBS360BNT3 This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact.

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  Barriers, Rectifier, Schottky, Schottky barrier

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