Measuring Power MOSFET Characteristics

Document Number: : 18-Nov-101 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT SILICONIXP ower MOSFETsApplication Note AN-957 Measuring Power MOSFET CharacteristicsAPPLICATION NOTETABLE OF CONTENTSPage1. General Information .. 22. BVDSS .. 33. IDSS .. 34. VGS(th) .. 35. 46. 47. RDS(on) .. 58. 59. Composite Characteristics .. 610. Transfer Characteristics .. 611. Measurement of Power MOSFET Characteristics without a Curve Tracer .. 612. A Fixture to Speed-up Testing Time .. 9 This application note describes methods for Measuring Power MOSFET Characteristics , both with a curve tracer and withspecial-purpose test circuits. Measuring Power MOSFET Characteristics Number: 907152 Revision: 18-Nov-10 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Note AN-957 Vishay SiliconixAPPLICATION NOTETOPICS COVERED: Converting the nomenclature from bipolars to MOSFETs P-channel Power MOSFETs Initial settings Breakdown Drain leakage Gate threshold Gate leakage Transconductance On-resistance Diode drop Characteristics in synchronous rectification Transfer Characteristics Measurements without a curve tracer Device capacitanc

metal parts of many Power MOSFETs (for example, the tab of TO-220 devices) are connected to the drain and are therefore at the potential of the collector supply. As with any semiconductor device, some of the characteristics of Power MOSFETs are temperature dependent. For tests in which there is significant heating of

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