Transcription of Measuring Power MOSFET Characteristics
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Measuring Power MOSFET Characteristics
Document Number: : 18-Nov-101 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT SILICONIXP ower MOSFETsApplication Note AN-957 Measuring Power MOSFET CharacteristicsAPPLICATION NOTETABLE OF CONTENTSPage1. General Information .. 22. BVDSS .. 33. IDSS .. 34. VGS(th) .. 35. 46. 47. RDS(on) .. 58. 59. Composite Characteristics .. 610. Transfer Characteristics .. 611. Measurement of Power MOSFET Characteristics without a Curve Tracer .. 612. A Fixture to Speed-up Testing Time .. 9 This application note describes methods for Measuring Power MOSFET Characteristics , both with a curve tracer and withspecial-purpose test circuits.
This is the forward transconductance of the device at a specified value of ID. gfs represents the signal gain (drain current divided by gate voltage) in the linear region. This parameter should be measured with a small AC superimposed on a gate bias an d the curve tracer is not the appropriate tool for this measurement. Even with specific
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