Transcription of Measuring Power MOSFET Characteristics
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Document Number: : 18-Nov-101 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT SILICONIXP ower MOSFETsApplication Note AN-957 Measuring Power MOSFET CharacteristicsAPPLICATION NOTETABLE OF CONTENTSPage1. General Information .. 22. BVDSS .. 33. IDSS .. 34. VGS(th) .. 35. 46. 47. RDS(on) .. 58. 59. Composite Characteristics .. 610. Transfer Characteristics .. 611. measurement of Power MOSFET Characteristics without a Curve Tracer .. 612. A Fixture to Speed-up Testing Time.
This measurement is made in ... In many cases, the leakage current will be inthe nA range, in which case the trace will be dominated by currents which flow through the device capacitance as aresult of minute fluctuations in the collector supply voltage. 10.The above procedure is for determining gate leakage
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