Transcription of Measuring Power MOSFET Characteristics
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Measuring Power MOSFET Characteristics
Document Number: : 18-Nov-101 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT SILICONIXP ower MOSFETsApplication Note AN-957 Measuring Power MOSFET CharacteristicsAPPLICATION NOTETABLE OF CONTENTSPage1. General Information .. 22. BVDSS .. 33. IDSS .. 34. VGS(th) .. 35. 46. 47. RDS(on) .. 58. 59. Composite Characteristics .. 610. Transfer Characteristics .. 611. Measurement of Power MOSFET Characteristics without a Curve Tracer .. 612. A Fixture to Speed-up Testing Time .. 9 This application note describes methods for Measuring Power MOSFET Characteristics , both with a curve tracer and withspecial-purpose test circuits. Measuring Power MOSFET Characteristics Number: 907152 Revision: 18-Nov-10 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Note AN-957 Vishay SiliconixAPPLICATION NOTETOPICS COVERED: Converting the nomenclature from bipolars to MOSFETs P-channel Power MOSFETs Initial settings Breakdown Drain leakage Gate threshold Gate leakage Transconductance On-resistance Diode drop Characteristics in synchronous rectification Transfer Characteristics Measurements without a curve tracer Device capacitances Switching times Gate charge Reverse recover
polarity switch to the PNP position, and reapply the voltage (see figure 6). The trace will take time to settle because of the gate-source capacitance. Fig. 5 - Gate-source threshold voltage 6. gfs This is the forward transconductance of the device at a specified value of ID. gfs represents the signal gain (drain
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