Transcription of MMBT2222LT1 - General Purpose Transistors
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MMBT2222LT1 - General Purpose Transistors
Semiconductor Components Industries, LLC, 1994 October, 2016 Rev. 111 Publication Order Number: MMBT2222LT1 /DMMBT2222L, MMBT2222AL,SMMBT2222 ALGeneral Purpose TransistorsNPN SiliconFeatures These Devices are Pb Free, Halogen Free/BFR Free and are RoHSCompliant S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC Q101 Qualified andPPAP CapableMAXIMUM RATINGSR atingSymbolValueUnitCollector Emitter VoltageMMBT2222 LMMBT2222AL, SMMBT2222 ALVCEO3040 VdcCollector Base VoltageMMBT2222 LMMBT2222AL, SMMBT2222 ALVCBO6075 VdcEmitter Base VoltageMMBT2222 LMMBT2222AL, Current ContinuousIC600mAdcCollector Current Peak (Note 3)ICM1100mAdcTHERMAL CHARACTERISTICSC haracteristicSymbolMaxUnitTotal Device Dissipation FR 5 Board(Note 1) TA = 25 CDerate above 25 CThermal Resistance, Junction to AmbientRqJA556 C/WTotal Device Dissipation AluminaSubstrate (Note 2) TA = 25 CDerate above 25 CThermal Resistance, Junction to AmbientRqJA417 C/WJunction and Storage Temperature RangeTJ, Tstg 55 to +150 CStresses exceeding those listed in the Maximum Ratings table may damage thedevice.
MMBT2222L, MMBT2222AL, SMMBT2222AL www.onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) MMBT2222 MMBT2222A
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