Transcription of MMBT3904LT1 - General Purpose Transistor
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MMBT3904LT1 - General Purpose Transistor
Semiconductor Components Industries, LLC, 1994 October, 2016 Rev. 131 Publication Order Number: MMBT3904LT1 /DMMBT3904L, SMMBT3904 LGeneral Purpose TransistorNPN SiliconFeatures These Devices are Pb Free, Halogen Free/BFR Free and are RoHSCompliant S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC Q101 Qualified andPPAP CapableMAXIMUM RATINGSR atingSymbolValueUnitCollector Emitter VoltageVCEO40 VdcCollector Base VoltageVCBO60 VdcEmitter Base Current ContinuousIC200mAdcCollector Current Peak (Note 3)ICM900mAdcTHERMAL CHARACTERISTICSC haracteristicSymbolMaxUnitTotal Device Dissipation FR 5 Board (Note 1) @TA = 25 CDerate above 25 CThermal Resistance, Junction to AmbientRqJA556 C/WTotal Device Dissipation Alumina Substrate, (Note 2)@TA = 25 CDerate above 25 CThermal Resistance, Junction to AmbientRqJA417 C/WJunction and Storage TemperatureTJ, Tstg 55 to +150 CStresses exceeding those listed in the Maximum Ratings table may damage thedevice.
MMBT3904L, SMMBT3904L www.onsemi.com 3 TYPICAL TRANSIENT CHARACTERISTICS Figure 3. Capacitance REVERSE BIAS VOLTAGE (VOLTS) 2.0 3.0 5.0 7.0 10 1.0 0.1 Figure 4.
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