Transcription of MMBT3904LT1DB - General Purpose Transistor
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MMBT3904LT1DB - General Purpose Transistor
DATA Semiconductor Components Industries, LLC, 1994 August, 2021 Rev. 141 Publication Order Number:MMBT3904LT1/DGeneral Purpose TransistorNPN SiliconMMBT3904L, SMMBT3904 LFeatures These Devices are Pb Free, Halogen Free/BFR Free and are RoHSCompliant S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC Q101 Qualified andPPAP CapableMAXIMUM RATINGSR atingSymbolValueUnitCollector Emitter VoltageVCEO40 VdcCollector Base VoltageVCBO60 VdcEmitter Base Current ContinuousIC200mAdcCollector Current Peak (Note 3)ICM900mAdcTHERMAL CHARACTERISTICSC haracteristicSymbolMaxUnitTotal Device Dissipation FR 5 Board (Note 1) @TA = 25 CDerate above 25 CThermal Resistance, Junction to AmbientRqJA556 C/WTotal Device Dissipation Alumina Substrate, (Note 2)@TA = 25 CDerate above 25 CThermal Resistance, Junction to AmbientRqJA417 C/WJunction and Storage TemperatureTJ, Tstg 55 to +150 CStresses exceeding those listed in the Maximum Ratings table may damage thedevice.
MMBT3904L, SMMBT3904L www.onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 − Vdc Collector−Base Breakdown Voltage (IC = 10 Adc, IE = 0) V(BR)CBO 60 − Vdc Emitter−Base …
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