Transcription of MMBT3904LT1DB - General Purpose Transistor
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MMBT3904LT1DB - General Purpose Transistor
DATA Semiconductor Components Industries, LLC, 1994 August, 2021 Rev. 141 Publication Order Number:MMBT3904LT1/DGeneral Purpose TransistorNPN SiliconMMBT3904L, SMMBT3904 LFeatures These Devices are Pb Free, Halogen Free/BFR Free and are RoHSCompliant S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC Q101 Qualified andPPAP CapableMAXIMUM RATINGSR atingSymbolValueUnitCollector Emitter VoltageVCEO40 VdcCollector Base VoltageVCBO60 VdcEmitter Base current ContinuousIC200mAdcCollector current Peak (Note 3)ICM900mAdcTHERMAL CHARACTERISTICSC haracteristicSymbolMaxUnitTotal Device Dissipation FR 5 Board (Note 1) @TA = 25 CDerate above 25 CThermal Resistance, Junction to AmbientRqJA556 C/WTotal Device Dissipation Alumina Substrate, (Note 2)@TA = 25 CDerate above 25 CThermal Resistance, Junction to AmbientRqJA417 C/WJunction and Storage TemperatureTJ, Tstg 55 to +150 CStresses exceeding those listed in the Maximum Ratings table may damage thedevice.
IC, COLLECTOR CURRENT (mA) 70 100 200 300 500 50 Figure 6. Rise Time IC, COLLECTOR CURRENT (mA) TIME (ns) 1.0 2.0 3.0 10 20 70 5 100 t , RISE TIME (ns) Figure 7. Storage Time IC, COLLECTOR CURRENT (mA) Figure 8. Fall Time IC, COLLECTOR CURRENT (mA) 5.0 7.0 30 50 200 10 30 7 20 70 100 200 300 500 50 1.0 2.0 3.0 10 20 70 5 5.0 7.0 30 50 100 200 ...
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