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MOS Caps II; MOSFETs I - MIT OpenCourseWare

- Microelectronic Devices and Circuits Lecture 10 -MOS Caps II; p-Sin+BSGSiO2+ vGS(= vGB) MOSFETs c * I - Outline Review -MOS Capacitor The "Delta-Depletion Approximation" (n-MOS example) Flat-band voltage: VFB vGB such that (0) = p-Si: VFB = p-Si m Threshold voltage: VT vGB such that (0) = p-Si:VT = VFB 2 p-Si + [2 Si qNA|2 p-Si| ]1/2/Cox Inversion layer sheet charge density: qN* = Cox *[vGC VT] Charge stores -qG(vGB) from below VFB to above VT Gate Charge: qG(vGB) from below VFB to above VT Gate Capacitance: Cgb(VGB) Sub-threshold charge: qN(vGB) below VT 3- terminal MOS Capacitors -Bias between B and C Impact is on VT(vBC).

3-Terminal MOS Capacitors - Bias between B and C Impact is on V T (v ... also find the corresponding value of v. GB, from ! v. GB "V. FB =#(0)"# p + t. ox $ ox. 2$ Si. qN. A #(0)"# p [ ] This has been done and is plotted along with the strong inversion layer charge above threshold on the following foil.

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