Transcription of MOSFET Device Physics and Operation
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1 MOSFET Device Physicsand INTRODUCTIONA field effect transistor (FET) operates as a conducting semiconductor channel with twoohmic contacts thesourceand thedrain where the number of charge carriers in thechannel is controlled by a third contact thegate. In the vertical direction, the gate-channel-substrate structure (gate junction)can be regarded as an orthogonal two-terminaldevice, which is either a MOS structure or a reverse-biased rectifying Device that controlsthe mobile charge in the channel by capacitive coupling (field effect). Examples of FETsbased on these principles are metal-oxide-semiconductor FET ( MOSFET ), junction FET(JFET), metal-semiconductor FET (MESFET), and heterostructure FET (HFETs).
strate. Almost universally, the MOS structure utilizes doped silicon as the substrate and its native oxide, silicon dioxide, as the insulator. In the silicon–silicon dioxide system, the density of surface states at the oxide–semiconductor interface is very low compared to the typical channel carrier density in a MOSFET.
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