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MOSFET Device Physics and Operation

1 MOSFET Device Physicsand INTRODUCTIONA field effect transistor (FET) operates as a conducting semiconductor channel with twoohmic contacts thesourceand thedrain where the number of charge carriers in thechannel is controlled by a third contact thegate. In the vertical direction, the gate-channel-substrate structure (gate junction)can be regarded as an orthogonal two-terminaldevice, which is either a MOS structure or a reverse-biased rectifying Device that controlsthe mobile charge in the channel by capacitive coupling (field effect). Examples of FETsbased on these principles are metal-oxide-semiconductor FET ( MOSFET ), junction FET(JFET), metal-semiconductor FET (MESFET), and heterostructure FET (HFETs).

CMOS technology combines both n-channel and p-channel MOSFETs to provide very low power consumption along with high speed. New silicon-on-insulator (SOI) technology may help achieve three-dimensional integration, that is, packing of devices into many Device Modeling for Analog and RF CMOS Circuit Design. T. Ytterdal, Y. Cheng and T. A. Fjeldly

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