Transcription of N-Channel 200-V (D-S) 175 °C MOSFET
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N-Channel 200-V (D-S) 175 °C MOSFET
vishay SiliconixSUP57N20-33 Document Number: 72100S-71662-Rev. B, 200-V (D-S) 175 C MOSFETFEATURES TrenchFET power MOSFET 175 C Junction TemperatureAPPLICATIONS Isolated DC/DC converters- Primary-Side SwitchPRODUCT SUMMARY V(BR)DSS (V)rDS(on) ( )ID (A) at VGS = 10 V57TO-220 ABTop ViewGD SDRAIN connected to TABO rdering Information: SUP57N20-33 SUP57N20-33-E3 (Lead (Pb)-free)DGSN- channel MOSFETN otes: a. Duty cycle 1 %.b. See SOA curve for voltage When Mounted on 1" square PCB (FR-4 material).* Pb containing terminations are not RoHS compliant, exemptions may MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter Symbol LimitUnit Drain-Source Voltage VDS200 VGate-Source Voltage VGS 20 Continuous Drain Current (TJ = 175 C)TC = 25 CID57 ATC = 125 C33 Pulsed Drain CurrentIDM140 Avalanche CurrentIAS35 Single Pulse Avalanche EnergyaL = mHEAS61mJMaximum power DissipationaTC = 25 CPD300bWTA = 25 Junction and Storage Temperature Range TJ, Tstg- 55 to 175 CTHERMAL RESISTANCE RATINGS Parameter Symbol LimitUnit Junction-to-Ambient (PCB Mount)cRthJA40 C/WJunction-to-Case (Drain) * Number: 72100S-71662-Rev.
Vishay Siliconix SUP57N20-33 Document Number: 72100 S-71662-Rev. B, 06-Aug-07 www.vishay.com 1 N-Channel 200-V (D-S) 175 °C MOSFET FEATURES • TrenchFET® Power MOSFET † 175 °C Junction Temperature
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