Transcription of N-Channel Reduced Qg, Fast Switching MOSFET
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N-Channel Reduced Qg, Fast Switching MOSFET
Si4800 BDY. vishay Siliconix N-Channel Reduced Qg, fast Switching MOSFET . PRODUCT SUMMARY FEATURES. VDS (V) RDS(on) ( ) ID (A) Halogen-free According to IEC 61249-2-21. Available at VGS = 10 V 9. 30 TrenchFET Power MOSFET . at VGS = V 7. High-Efficient PWM Optimized 100 % UIS and Rg Tested SO-8. D. S 1 8 D. S 2 7 D. S 3 6 D. G 4 5 D. G. Top View S. Ordering Information: Si4800 BDY-T1-E3 (Lead (Pb)-free). Si4800 BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET . ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Symbol 10 s Steady State Unit Drain-Source Voltage VDS 30. V. Gate-Source Voltage VGS 25. TA = 25 C 9 Continuous Drain Current (TJ = 150 C)a, b ID. TA = 70 C Pulsed Drain Current (10 s Pulse Width) IDM 40 A. Continuous Source Current (Diode Conduction)a, b IS Avalanche Current IAS 15.
Vishay Siliconix Si4800BDY Document Number: 72124 S-83039-Rev. H, 29-Dec-08 www.vishay.com 1 N-Channel Reduced Qg, Fast Switching MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Available † TrenchFET® Power MOSFET † High-Efficient PWM Optimized
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