NTE182 (NPN) & NTE183 (PNP) Silicon …

NTE182 (NPN) & NTE183 (PNP) Silicon Complementary Transistors General Purpose Amplifier, Switch Description: The NTE182 (NPN) and NTE183 (PNP) are silicon transistors in a TO127 type case designed for use

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NTE1509 Integrated Circuit 10–Step Dot/Bar …

NTE1509 Integrated Circuit 10–Step Dot/Bar Display Driver for Logarithmic Scale Description: The NTE1509 is a monolithic integrated circuit in an 18–Lead DIP type package that senses analog

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NTE955M NTE955S NTE955SM Integrated Circuit …

NTE955M NTE955S NTE955SM Integrated Circuit Timing Circuit Description: The NTE955 series timing circuit is a highly stable controller capable of …

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LED Lights 04-new - NTE Electronics, Inc

NTE Electronics, Inc. Voice (973) 74 8−5089 FAX (973) 74 6224 http://www.nteinc.com 21 LED Lights Automatic Smart Solar & Sensor LED Wall Light

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NTE5400 thru NTE5406 Silicon Controlled Rectifier …

NTE5400 thru NTE5406 Silicon Controlled Rectifier (SCR) 0.8 Amp Sensitive Gate, TO92 Description: The NTE5400 through NTE5406 sensitive gate SCR semiconductors are halfwave unidirectional

NTE956 Integrated Circuit 3–Terminal Adjustable …

NTE956 Integrated Circuit 3–Terminal Adjustable Positive Voltage Regulator Description: The NTE956 is an adjustable 3–terminal positive voltage regulator in a T O220 type package capable

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NTE957 Integrated Circuit 3–Terminal Adjustable …

NTE957 Integrated Circuit 3–Terminal Adjustable Negative Voltage Regulator Description: The NTE957 is an adjustable 3–terminal negative voltage regulator in a TO220 type package capable

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NTE2985 Logic Level MOSFET N Channel, …

G S D NTE2985 Logic Level MOSFET N−Channel, Enhancement Mode High Speed Switch TO220 Type Package Features: Dynamic dv/dt Rating Logic Level Gate Drive RDS(on) Specified at VGS = 4V & 5V

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NTE287 (NPN) & NTE288 (PNP) Silicon …

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics (Note 1) DC Current Gain NTE287 & NTE288

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Heat Shrink Tubing Thin Wall, 2:1 Shrink Ratio …

Heat Shrink Tubing Thin Wall, 2:1 Shrink Ratio (Includes Assortment Packs) Description: NTE’s Thin W all Heat Shrink Tubing is a high performance, multi purpose, professional grade, flexible,

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NPN medium power transistor - st.com

October 2007 Rev 3 1/8 8 2SD882 NPN medium power transistor Features High current Low saturation voltage Complement to 2SB772 Applications Voltage regulation Relay driver Generic switch Audio power amplifier DC-DC converter Description The device is a NPN transistor manufactured by

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UTC - NKC Electronics

utc s8050 npn epitaxial silicon transistor utc unisonic technologies co., ltd.1 qw-r201-013,a low voltage high current small signal npn transistor description the utc s8050 is a low voltage high current small

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SS8050 NPN Epitaxial Silicon Transistor - e-ele.net

©2004 Fairchild Semiconductor Corporation Rev. B2, August 2004 SS8050 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Electrical Characteristics Ta=25°C unless otherwise noted hFE Classification Symbol Parameter Ratings Units

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BC237/238/239 NPN Epitaxial Silicon Transistor

©2000 Fairchild Semiconductor International Rev. B, January 2001 BC237/238/239 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Electrical Characteristics Ta=25°C unless otherwise noted hFE Classification Symbol Parameter Value Units

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SMD General Purpose Transistor (NPN) MMBT3904

Rev. C/CZ MMBT3904 SMD General Purpose Transistor (NPN) www.taitroncomponents.com Page 3 of 9 Fig.1- Delay and Rise Time Fig.2- …

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2N2222 - Farnell element14

2N2222 Low Power Bipolar Transistors Page 1 06/04/06 V1.0 Features: • NPN Silicon Planar Switching Transistors. • Switching and Linear application DC …

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BC846 BC847 BC848 BC849 BC850 - NPN Epitaxial …

BC846 / BC847 / BC848 / BC850 — NPN Epitaxial Silicon Transistor www.onsemi.com 2 Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device.

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Transistor Basics - Ted Pavlic

ECE 327 [Lab 1: The Bipolar (Junction) Transistor] Transistor Basics 2 The Ideal Bipolar Junction Transistor Because the current gain β is typically unknown or varies greatly with temperature, time, collector–emitter

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BC817-40W - 45 V, 0.5 A, General Purpose NPN …

BC817−40W www.onsemi.com 3 TYPICAL CHARACTERISTICS Figure 1. DC Current Gain vs. Collector Current Figure 2. Collector Emitter Saturation Voltage

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