Transcription of NTE123A (NPN) & NTE159M (PNP) Silicon …
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NTE123A (NPN) & NTE159M (PNP) Silicon …
NTE123A (NPN) & NTE159M (PNP). Silicon complementary Transistors General Purpose Description: The NTE123A (NPN) and NTE159M (PNP) are widely used Industry Standard complementary transis- tors in a TO18 type case designed for applications such as medium speed switching and amplifiers from audio to VHF frequencies. Features: D Low Collector Saturation Voltage: 1V (Max). D High Current Gain Bandwidth Product: fT = 300 MHz (Min) @ IC 20mA. Absolute Maximum Ratings: Collector Emitter Voltage, VCEO. NTE123A .. 40V. NTE159M .. 60V. Collector Base Voltage, VCBO. NTE123A .. 75V. NTE159M .. 60V. Emitter Base Voltage, VEBO. NTE123A .. 6V. NTE159M .. 5V. Continuous Collector Current, IC. NTE123A .
NTE123A (NPN) & NTE159M (PNP) Silicon Complementary Transistors General Purpose Description: The NTE123A (NPN) and NTE159M (PNP) are widely used “Industry Standard” complementary transis-
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