Transcription of NX7002AK - Nexperia
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NX7002AK60 V, single N-channel Trench MOSFET6 August 2015 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface- mounted Device (SMD) plastic package using Trench Features and benefits Very fast switching Trench MOSFET technology ESD protected3. Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits4. Quick reference dataTable 1. Quick reference dataSymbolParameterConditionsMinTypMaxUn itVDSdrain-source voltage--60 VVGS gate-source voltageTj = 25 C-20-20 VVGS = 10 V; Tsp = 25 C--300mAIDdrain currentVGS = 10 V; Tamb = 25 C[1]--190mAStatic characteristicsRDSondrain-source on-stateresistanceVGS = 10 V; ID = 100 mA; Tj = 25 [1]Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. Nexperia 2017.
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. Tj(°C)-75 -25 25 75 125 175 017aaa123 40 80 120 Pder (%) 0 Fig. 1. Normalized total power dissipation as a function of junction ...
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