Transcription of P-Channel 40 V (D-S) MOSFET - Vishay Intertechnology
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P-Channel 40 V (D-S) MOSFET - Vishay Intertechnology
Vishay SiliconixSi2319 CDSD ocument Number: 66709S10-1286-Rev. A, 40 V (D-S) MOSFETFEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET Power MOSFET 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch DC/DC ConverterNotes:a. Based on TC = 25 Surface mounted on 1" x 1" FR4 t = 5 s. d. Maximum under steady state conditions is 166 SUMMARY VDS (V)RDS(on) ( )ID (A)aQg (Typ.)- at VGS = - 10 V - at VGS = - V - (SOT-23)SDTo p View231Si2319 CDS (P7)** Marking CodeOrdering Information: Si2319 CDS-T1-GE3 (Lead (Pb)-free and Halogen-free)SGDP- channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise notedParameter Symbol
P-Channel 40 V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition TEFhcne †Tr ® Power MOSFET † 100 % Rg Tested † Compliant to RoHS Directive 2002/95/EC APPLICATIONS † Load Switch † DC/DC Converter Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d.
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