Transcription of P-Channel 60-V (D-S) MOSFET - Vishay Intertechnology
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Vishay SiliconixSi2309 CDSNew ProductDocument Number: 68980S-82584-Rev. A, 60-V (D-S) MOSFETFEATURES Halogen-free Option Available TrenchFET power MOSFETAPPLICATIONS Load SwitchPRODUCT SUMMARY VDS (V)RDS(on) ( )ID (A)dQg (Typ.)- at VGS = - 10 V - at VGS = - V - Information: Si2309 CDS-T1-E3 (Lead (Pb)-free)Si2309 CDS-T1-GE3 (Lead (Pb)-free and Halogen-free)GTO-236(SOT-23)SDTop View231* Marking CodeSi2309 CDS (N9)*SGDP- channel MOSFETN otes: a. Surface Mounted on 1" x 1" FR4 t = 5 Maximum under Steady State conditions is 166 C/W. d. When TC = 25 MAXIMUM RATINGS TA = 25 C, unless otherwise notedParameter Symbol LimitUnit Drain-Source Voltage VDS- 60 VGate-Source Voltage VGS 20 Continuous Drain Current (TJ = 150 C)a, bTC = 25 CID - = 70 C- = 25 C- , bTA = 70 C - , bPulsed Drain Current (10 s Pulse Width)IDM- 8 Single Pulse Avalanche CurrentL = mHIAS- 5 Continuous Source-Drain Diode CurrentTC = 25 CIS- = 25 C- , bMaximum power DissipationTC = 25 = 70 = 2
Vishay Siliconix Si2309CDS New Product Document Number: 68980 S-82584-Rev. A, 27-Oct-08 www.vishay.com 1 P-Channel 60-V (D-S) MOSFET FEATURES • Halogen-free Option Available † TrenchFET® Power MOSFET APPLICATIONS
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