Transcription of P2N2222A - Amplifier Transistors
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P2N2222A - Amplifier Transistors
Semiconductor Components Industries, LLC, 2013 January, 2013 Rev. 71 Publication Order Number: P2N2222A /DP2N2222 AAmplifier TransistorsNPN SiliconFeatures These are Pb Free Devices*MAXIMUM RATINGS (TA = 25 C unless otherwise noted)CharacteristicSymbolValueUnitColle ctor Emitter VoltageVCEO40 VdcCollector Base VoltageVCBO75 VdcEmitter Base Current ContinuousIC600mAdcTotal Device Dissipation @ TA = 25 CDerate above 25 CTotal Device Dissipation @ TC = 25 CDerate above 25 COperating and Storage JunctionTemperature RangeTJ, Tstg 55 to+150 CTHERMAL CHARACTERISTICSC haracteristicSymbolMaxUnitThermal Resistance, Junction to AmbientRqJA200 C/WThermal Resistance, Junction to C/WStresses exceeding Maximum Ratings may damage the device. MaximumRatings are stress ratings only. Functional operation above the RecommendedOperating Conditions is not implied. Extended exposure to stresses above theRecommended Operating Conditions may affect device reliability.*For additional information on our Pb Free strategy and soldering details, pleasedownload the ON Semiconductor Soldering and Mounting TechniquesReference Manual, 92(Pb Free)5000 Units/BulkDevicePackageShipping P2N2222 AGTO 92(Pb Free)2000/Tape & AmmoORDERING INFORMATIONCOLLECTOR12 BASE3 EMITTER For information on tape and reel specifications,including part orientation and tape sizes, pleaserefer to our Tape and Reel Packaging SpecificationBrochure, BRD8011 LEADTAPE & REELAMMO PACKS
P2N2222A http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter ...
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