Transcription of P2N2222A Amplifier Transistors - ON Semiconductor
{{id}} {{{paragraph}}}
Example: bankruptcy
P2N2222A Amplifier Transistors - ON Semiconductor
Semiconductor Components Industries, LLC, 2013 January, 2013 Rev. 71 Publication Order Number: P2N2222A /DP2N2222 AAmplifier TransistorsNPN SiliconFeatures These are Pb Free Devices*MAXIMUM RATINGS (TA = 25 C unless otherwise noted)CharacteristicSymbolValueUnitColle ctor Emitter VoltageVCEO40 VdcCollector Base VoltageVCBO75 VdcEmitter Base current ContinuousIC600mAdcTotal Device Dissipation @ TA = 25 CDerate above 25 CTotal Device Dissipation @ TC = 25 CDerate above 25 COperating and Storage JunctionTemperature RangeTJ, Tstg 55 to+150 CTHERMAL CHARACTERISTICSC haracteristicSymbolMaxUnitThermal Resistance, Junction to AmbientRqJA200 C/WThermal Resistance, Junction to C/WStresses exceeding Maximum Ratings may damage the device.
Collector Current − Continuous IC 600 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 W mW/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit
Loading..
Tags:
Information
Domain:
Source:
Link to this page:
Please notify us if you found a problem with this document: