Transcription of PD - 9.1478A IRF4905S/L - Infineon Technologies
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PD - 9.1478A IRF4905S/L - Infineon Technologies
irf4905s /LHEXFET power MOSFETPD - Process TechnologylSurface Mount ( irf4905s )lLow-profile through-hole (IRF4905L)l175 C Operating TemperaturelFast SwitchinglP-ChannellFully Avalanche Rated8/25/97 SDGA bsolute Maximum RatingsFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thisbenefit, combined with the fast switching speed andruggedized device design that HEXFET power MOSFET sare well known for, provides the designer with an extremelyefficient and reliable device for use in a wide variety D2 Pak is a surface mount power package capable ofaccommodating die sizes up to HEX-4.
IRF4905S/L HEXFET® Power MOSFET PD - 9.1478A l Advanced Process Technology l Surface Mount (IRF4905S) l Low-profile through-hole (IRF4905L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated 8/25/97 S D G Absolute Maximum Ratings Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve
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