Transcription of Performance and Reliability Characteristics of …
{{id}} {{{paragraph}}}
Example: tourism industry
Performance and Reliability Characteristics of …
Performance and Reliability Characteristics of 1200 V, 100 A, 200oC Half-Bridge SiC MOSFET-JBS Diode Power ModulesJames D. Scofield and J. Neil Merrett Air Force Research Laboratory 1950 Fifth St WPAFB, OH 45433 937-255-5949 James Richmond and Anant Agarwal CREE, Inc. 4600 Silicon Dr Durham, NC 27703 Scott Leslie Powerex, Inc. 173 Pavilion Lane Youngwood, PA 15697 Abstract A custom multi-chip power module packaging was designed to exploit the electrical and thermal Performance potential of silicon carbide MOSFETs and JBS diodes. The dual thermo-mechanical package design was based on an aggressive 200oC ambient environmental requirement and 1200 V blocking and 100 A conduction ratings. A novel baseplate-free module design minimizes thermal impedance and the associated device junction temperature rise. In addition, the design incorporates a free-floating substrate configuration to minimize thermal expansion coefficient induced stresses between the substrate and case.
Performance and Reliability Characteristics of 1200 V, 100 A, 200oC Half-Bridge SiC MOSFET-JBS Diode Power Modules James D. Scofield and J. Neil Merrett Air Force Research Laboratory
Tags:
Information
Domain:
Source:
Link to this page:
Please notify us if you found a problem with this document: