PHOTODIODE CHARACTERISTICS

1 UDT Sensors Inc. Phone: 310-978-0516 Fax: 310-644-1727 http:\\ CHARACTERISTICSS ilicon photodiodes are semiconductor devices responsive to high-energy particles and photons. Photodiodes operate by absorption ofphotons or charged particles and generate a flow of current in an ex-ternal circuit, proportional to the incident power. Photodiodes can beused to detect the presence or absence of minute quantities of lightand can be calibrated for extremely accurate measurements from in-tensities below 1 pW/cm2 to intensities above 100 mW/cm2. Siliconphotodiodes are utilized in such diverse applications as spectroscopy,photography, analytical instrumentation, optical position sensors, beamalignment, surface characterization, laser range finders, optical com-munications, and medical imaging DIFFUSED SILICON PHOTODIODECONSTRUCTIONP lanar diffused silicon photodiodes are simply P-N junction diodes.

Si A bi Si J V V A C + = 0 0 2 ( 2 ) Figure 4. Capacitance of PIN-RD100 versus Reverse Bias Voltage where 0 = 8.854x10-14 F/cm, is the permittivity of free space, Si =11.9 is the silicon dielectric constant, µ = 1400 cm 2/Vs is the mobility of the electrons at 300 ºK, is the resistivity of the silicon, V bi is the built-in voltage of silicon ...

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