PHOTODIODE CHARACTERISTICS

Si A bi Si J V V A C + = 0 0 2 ( 2 ) Figure 4. Capacitance of PIN-RD100 versus Reverse Bias Voltage where 0 = 8.854x10-14 F/cm, is the permittivity of free space, Si =11.9 is the silicon dielectric constant, µ = 1400 cm 2/Vs is the mobility of the electrons at 300 ºK, is the resistivity of the silicon, V bi is the built-in voltage of silicon ...