Transcription of Power MOSFET - Vishay Intertechnology
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Power MOSFET - Vishay Intertechnology
Document Number: B, 21-Mar-111 This datasheet is subject to change without PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT MOSFETIRFP260, SiHFP260 Vishay SiliconixFEATURES Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements Compliant to RoHS Directive 2002/95/ECDESCRIPTIONT hird generation Power MOSFETs from Vishay provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance TO-247AC package is preferred forcommercial-industrial applications where higher powerlevels preclude the use of TO-220AB devices. TheTO-247AC is similar but superior to the earlier TO-218package because of its isolated mouting hole.
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit R G I AS tp 0.01 Ω D.U.T L V DS +-V DD 10 V Vary t p to obtain required I AS I AS V DS V DD V DS t p Q GS Q GD Q G V G Charge 10 V D ...
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