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1 Practical considerations when comparing SiC and GaN in power applications Anup Bhalla, PhD. VP Engineering UnitedSiC, Inc. Abstract Silicon Carbide (SiC) and Gallium Nitride (GaN) semiconductor technologies are promising great things for the future. SiC devices in a cascode configuration enable existing systems to be easily upgraded to get the benefits of wide band-gap devices right now. Wide band-gap devices what they promise Wide band-gap (WBG) semiconductor technologies such as Silicon Carbide (SiC) and Gallium Nitride (GaN) are the hot topics of the moment, promising anything from universal wireless charging to power converters shrunk to almost no size. However, the choice between the technologies and devices available is not always straightforward, and the markets they can penetrate are perhaps wider than you might think. Let s take a step back and just outline what WBG devices are.
Figure 1 shows a cell ... Finding the optimum solution for your application Although enhancement-mode, normally OFF, Si- and now SiC-MOSFETs have been the component of choice for low- and medium-power switching ... for a UnitedSiC UJC1206K cascode device with a 600V inductive load. Bear in mind that every 1nH of inductance gives a 1V transient ...
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