Practical considerations when comparing SiC ... - UnitedSiC

1 Practical considerations when comparing SiC and GaN in power applications Anup Bhalla, PhD. VP Engineering UnitedSiC , Inc. Abstract Silicon Carbide (SiC) and Gallium Nitride (GaN) semiconductor technologies are promising great things for the future. SiC devices in a cascode configuration enable existing systems to be easily upgraded to get the benefits of wide band-gap devices right now. Wide band-gap devices what they promise Wide band-gap (WBG) semiconductor technologies such as Silicon Carbide (SiC) and Gallium Nitride (GaN) are the hot topics of the moment, promising anything from universal wireless charging to power converters shrunk to almost no size. However, the choice between the technologies and devices available is not always straightforward, and the markets they can penetrate are perhaps wider than you might think. Let s take a step back and just outline what WBG devices are. Semiconductors have bound electrons that occupy distinct energy levels around an atomic nucleus valence and conduction bands.

An extra parallel SiC Schottky diode can be added to bypass the body diode, but at significant cost and with limited benefit. • With MOSFETs, the gate turn-on threshold is low, about 2.2V for SiC ... trench JFET with the JFET gate sharing a common connection to the MOSFET source. When a positive voltage is applied to the Si-MOSFET gate, it ...

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