Transcription of ProblemsandSolutionsto PhysicsofSemiconductorDevices
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ProblemsandSolutionsto PhysicsofSemiconductorDevices
Problems and Solutions toPhysics of Semiconductor Lavrov Contents1 Properties of Semiconductors .. Schottky Diode .. Idealp-nJunction .. Nonidealp-nJunction .. Solar Cells .. Bipolar Transistor .. MIS/MOS Capacitor and MOSFET .. Low-dimensional Structures .. LEDs and Lasers .. 82 Literature93 Tables104 Answers and Properties of Semiconductors .. Schottky Diode .. Idealp-nJunction .. Nonidealp-nJunction .. Solar Cells .. Bipolar Transistor .. MIS/MOS Capacitor and MOSFET.
0, T= 300 K, and ǫ Si = 11.9. 1.3 Ideal p-n Junction 1. Find the built-in potential for a p-n Si junction at room temperature if the bulk resistivity of Si is 1 Ωcm. Electron mobility in Si at RT is 1400 cm2 V−1 s−1; µ n/µp = 3.1; ni = 1.05× 1010 cm−3. 2. For the p-nSi junction from the previous problem calculate the width of the space
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