Transcription of R33 - Image Sensor S
{{id}} {{{paragraph}}}
R33 A Temporal-Noise cmos Image Sensor with Charge-Domain CDS and Period-Controlled Variable Conversion-Gain Xiaoliang Ge1, Albert Theuwissen1,2 1 Delft University of Technology, Delft, the Netherlands; 2 Harvest Imaging, Bree, BelgiumEmail: Tel: (+31) (0) 152786518 Abstract This paper introduces a proof-of-concept low-noise cmos Image Sensor (CIS) intended for photon-starved imaging applications. The proposed architecture is based on a charge-sampling pixel featuring in-pixel amplification to reduce its input-referred noise. With the proposed technique, the structure realizes a period-controlled variable conversion factor at pixel-level. This enables the conversion factor and the noise-equivalent number of electrons to be tunable according to the application without any change in hardware.
R33 A 0.5e-rms Temporal-Noise CMOS Image Sensor with Charge-Domain CDS and Period-Controlled Variable Conversion-Gain Xiaoliang Ge1, Albert Theuwissen1,2 ... CMOS image sensor (CIS) intended for photon-starved imaging applications. The proposed
Domain:
Source:
Link to this page:
Please notify us if you found a problem with this document:
{{id}} {{{paragraph}}}
CMOS image sensor, Image, Image sensor, Sensor, Design of Prototype Scientific CMOS Image Sensors, Ion Implantation Technology for Image Sensors, Investigation of 4T CMOS Image Sensor, CMOS Sensor, CMOS image, CMOS Image Sensors and Associated Processing, CMOS Image Sensor Fabricated in Three-Dimensional Integrated Circuit Technology, Gamal Department of Electrical Engineering, Department of Electrical Engineering Stanford, CMOS Image Sensors: Electronic Camera On, CMOS Active Pixel Image Sensors: Past, Present, CMOS