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RADIATION HARDENED JANSR2N7520U3C POWER MOSFET …

Absolute Maximum RatingsParameterUnits ID @ VGS = -12V, TC = 25 C Continuous Drain Current-21 ID @ VGS = -12V, TC = 100 CContinuous Drain Drain Current -84PD @ TC = 25 CMax. POWER Dissipation75 WLinear Derating CVGSGate-to-Source Voltage 20 VEASS ingle Pulse Avalanche Energy 110mJIARA valanche Current -21 AEARR epetitive Avalanche Energy Diode Recovery dv/dt Junction-55 to 150 TSTGS torage Temperature Range CPckg. Mounting Surface (for 5s) (Typical)gPre-IrradiationInternational Rectifier s R5TM technology provides highperformance POWER mosfets for space devices have been characterized for Single EventEffects (SEE) with useful performance up to an LET of80 (MeV/(mg/cm2)).

www.irf.com 5 Pre-Irradiation IRHNJ597034, JANSR2N7520U3 Maximum Safe Operating Area Typical Gate Charge Vs. Gate-to-Source Voltage Typical Capacitance Vs.

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  Power, Radiation, Mosfets, Power mosfets, Hardened, Radiation hardened

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