Transcription of Radiofrequency Plasma Sources for Semiconductor Processing
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Radiofrequency Plasma Sources for Semiconductor Processing
1234567891011121314151617181920212223242 5262728293031323334353637383940414243444 5 Druckfreigabe/approvalforprintingWithout corrections/`ohneKorrekturenAftercorrect ions/nachAusf hrung`derKorrekturenDate/Datum:..Signatu re/Zeichen:..6 Radiofrequency Plasma Sources for Semiconductor ProcessingFrancis F. the etching and deposition steps in the production of Semiconductor chips, plasmaprocessing is required for three main reasons. First, electrons are used to dissociatethe input gas into atoms. Second, the etch rate is greatly enhanced by ion bombard-ment, which breaks the bonds in the first few monolayers of the surface, allowing theetchant atoms, usually Cl or F, to combine with substrate atoms to form volatilemolecules. And third, most importantly, the electric field of the Plasma sheathstraightens the orbits of the bombarding ions so that the etching is anisotropic,allowing the creation of features approaching nanometer Plasma Sources used in the Semiconductor industry were originally developedby trial and error, with little basic understanding of how they work.
Inductively Coupled Plasmas 6.3.1 General Description Though simple and inexpensive, the original CCPs had a number of disadvantages, and a new generation of plasma sources was called for. For instance, the internal electrodes in CCPs introduced unnecessary impurities into the plasma. Until dual-
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