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Radiofrequency Plasma Sources for Semiconductor Processing

1234567891011121314151617181920212223242 5262728293031323334353637383940414243444 5 Druckfreigabe/approvalforprintingWithout corrections/`ohneKorrekturenAftercorrect ions/nachAusf hrung`derKorrekturenDate/Datum:..Signatu re/Zeichen:..6 Radiofrequency Plasma Sources for Semiconductor ProcessingFrancis F. the etching and deposition steps in the production of Semiconductor chips, plasmaprocessing is required for three main reasons. First, electrons are used to dissociatethe input gas into atoms. Second, the etch rate is greatly enhanced by ion bombard-ment, which breaks the bonds in the first few monolayers of the surface, allowing theetchant atoms, usually Cl or F, to combine with substrate atoms to form volatilemolecules.

plasma, and the low frequency controls the ion distribution in the sheath. These devices are quite different from the original RIEs because they operate at high

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